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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF329/D NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. * Specified 28 Volt, 400 MHz Characteristics -- Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50% (Min) * Built-In Matching Network for Broadband Operation Using Double Match Technique * 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR * Gold Metallization System for High Reliability MRF329 100 W, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 333-04, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 60 4.0 9.0 12 270 1.54 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Max 0.65 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 30 60 4.0 -- -- -- -- -- -- Vdc Vdc Vdc NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF329 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (continued) Collector-Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CBO ICBO 60 -- -- -- -- 5.0 Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) hFE 20 -- 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 95 125 pF FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz, VSWR = 3:1 all angles) GPE No Degradation in Output Power 7.0 50 9.7 60 -- -- dB % L3 + C12 C13 C14 28 Vdc - L1 L2 DUT C10 Z2 RF INPUT Z1 RF OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C11 C1, C2, C7, C9 -- 1.0 - 20 pF Johanson (JMC 5501) C3, C4 -- 36 pF 100 mil Chip Cap (ATC) C5, C6 -- 50 pF 100 mil Chip Cap (ATC) C8 -- 30 pF 100 mil Chip Cap (ATC) C10 -- 2.0 - 150 pF 100 mil Chip Caps in Parallel (ATC) C11 -- 1.0 - 10 pF Johanson (JMC 5201) C12, C13 -- 1000 pF UNELCO Feedthru C14 -- 0.1 F Erie Redcap L1 -- 0.15 H Molded Choke with Ferrite Bead L1 -- (Ferroxcube #56-590-65/4B) on Ground End L2 -- 4 Turns #18 AWG, 1/4 ID L3 -- Ferroxcube VK200-19/4B Z1 -- Microstrip Line 2300 mils L x 210 mils W Z2 -- Microstrip Line 2300 mils L x 280 mils W Board -- Glass Teflon, t = 0.062, r = 2.56 Figure 1. 400 MHz Test Circuit MRF329 2 MOTOROLA RF DEVICE DATA 120 Pout , POWER OUTPUT (WATTS) 100 80 60 40 20 0 VCC = 28 Vdc Pout , POWER OUTPUT (WATTS) f = 100 MHz 225 MHz 400 MHz 120 100 80 60 40 20 0 100 VCC = 28 Vdc 6W 4W Pin = 11 W 9W 0 2 4 6 8 10 12 150 200 250 300 350 400 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 100 Pout , POWER OUTPUT (WATTS) 80 Pin = 11 W Pout , POWER OUTPUT (WATTS) 100 80 Pin = 11 W 8.5 W 8.5 W 60 6.5 W 40 60 6.5 W 40 20 f = 225 MHz 0 10 14 18 22 26 30 20 f = 400 MHz 0 10 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 12.5 Pout = 100 W VCC = 28 V G PE , POWER GAIN (dB) 11.5 10.5 9.5 8.5 0 100 200 f, FREQUENCY (MHz) 300 400 Figure 6. Power Gain versus Frequency MOTOROLA RF DEVICE DATA MRF329 3 f = 100 MHz 225 Zin 350 300 225 ZOL* 400 300 350 400 Pout = 100 W, VCC = 28 V f = 100 MHz Zo = 10 f MHz 100 225 300 350 400 Zin Ohms 0.55 + j0.40 0.60 + j1.40 1.00 + j2.15 1.50 + j2.20 1.85 + j1.70 ZOL* Ohms 3.56 - j1.60 2.30 - j1.10 1.95 - j0.70 1.70 - j0.20 1.50 + j0.30 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 7. Series Equivalent Input/Output Impedance MRF329 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- N D 2 1 3 Q 2 PL 0.13 (0.005) K -B- K M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L N P Q STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42 P 4 F G J H N N C -T- SEATING PLANE EMITTER COLLECTOR EMITTER BASE CASE 333-04 ISSUE E MOTOROLA RF DEVICE DATA MRF329 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF329 6 *MRF329/D* MRF329/D MOTOROLA RF DEVICE DATA |
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